111 research outputs found

    Spin current and electrical polarization in GaN double-barrier structures

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    Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.Comment: 13 pages, 6 figure

    g-Factor Tuning and Manipulation of Spins by an Electric Current

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    We investigate the Zeeman splitting of two-dimensional electrons in an asymmetric silicon quantum well, by electron-spin-resonance (ESR) experiments. Applying a small dc current we observe a shift in the resonance field due to the additional current-induced Bychkov-Rashba (BR) type of spin-orbit (SO) field. This finding demonstrates SO coupling in the most straightforward way: in the presence of a transverse electric field the drift velocity of the carriers imposes an effective SO magnetic field. This effect allows selective tuning of the g-factor by an applied dc current. In addition, we show that an ac current may be used to induce spin resonance very efficiently.Comment: 4 pages, 4 figure

    The Nuclear Spin Nanomagnet

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    Linearly polarized light tuned slightly below the optical transition of the negatively charged exciton (trion) in a single quantum dot causes the spontaneous nuclear spin polarization (self-polarization) at a level close to 100%. The effective magnetic field of spin-polarized nuclei brings the optical transition energy into resonance with photon energy. The resonantly enhanced Overhauser effect sustains the stability of the nuclear self-polarization even in the absence of spin polarization of the quantum dot electron. As a result the optically selected single quantum dot represents a tiny magnet with the ferromagnetic ordering of nuclear spins - the nuclear spin nanomagnet.Comment: 19 pages, including 3 figures. Short version has been accepted for publication in Physical Review Letter

    Electric-field induced spin excitations in two-dimensional spin-orbit coupled systems

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    Rigorous coupled spin-charge drift-diffusion equations are derived from quantum-kinetic equations for the spin-density matrix that incorporate effects due to k-linear spin-orbit interaction, an in-plane electric field, and the elastic scattering on nonmagnetic impurities. The explicit analytical solution for the induced magnetization exhibits a pole structure, from which the dispersion relations of spin excitations are identified. Applications of the general approach refer to the excitation of long-lived field-induced spin waves by optically generated spin and charge patterns. This approach transfers methods known in the physics of space-charge waves to the treatment of spin eigenmodes. In addition, the amplification of an oscillating electric field by spin injection is demonstrated.Comment: 17 pages, 3 figure

    Local field of spin-spin interactions in the nuclear spin system of n-GaAs

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    At low lattice temperatures the nuclear spins in a solid form a closed thermodynamic system that is well isolated from the lattice. Thermodynamic properties of the nuclear spin system are characterized by the local field of spin-spin interactions, which determines its heat capacity and the minimal achievable nuclear spin temperature in demagnetization experiments. We report the results of measurement of the local field for the nuclear spin system in GaAs, which is a model material for semiconductor spintronics. The choice of the structure, a weakly doped GaAs epitaxial layer with weak residual deformations, and of the measurement method, the adiabatic demagnetization of optically cooled nuclear spins, allowed us to refine the value of nuclear spin-spin local field, which turned out to be two times less than one previously obtained. Our experimental results are confirmed by calculations, which take into account dipole-dipole and indirect (pseudodipolar and exchange) nuclear spin interactions.Comment: 23 pages, 6 figures, 1 tabl

    Amplification of spin-filtering effect by magnetic field in GaAsN alloys

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    We have found that intensity II and circular polarization degree ρ\rho of the edge photoluminescence, excited in GaAsN alloys by circularly polarized light at room temperature, grow substantially in the longitudinal magnetic field BB of the order of 1\,kG. This increase depends on the intensity of pumping and, in the region of weak or moderate intensities, may reach a twofold value. In two-charge-state model, which considers spin-dependent recombination of spin-oriented free electrons on deep paramagnetic centers, we included the magnetic-field suppression of spin relaxation of the electrons bound on centers. The model describes qualitatively the rise of ρ\rho and II in a magnetic field under different pump intensities. Experimental dependences ρ(B)\rho(B) and I(B)I(B) are shifted with respect to zero of the magnetic field by a value of \sim170\,Gauss, while the direction of the shift reverses with change of the sign of circular polarization of pumping. As a possible cause of the discovered shift we consider the Overhauser field, arising due to the hyperfine interaction of an electron bound on a center with nuclei of the crystal lattice in the vicinity of the center.Comment: 8 pages, 6 figures, Submitted to Physical Review

    Spin-dependent electron dynamics and recombination in GaAs(1-x)N(x) alloys at room temperature

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    We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ~150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.Comment: 5 pages, 4 figures, Submitted to JETP Letter

    Fine structure and optical pumping of spins in individual semiconductor quantum dots

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    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

    Pumping of nuclear spins by the optical solid effect in a quantum dot

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    We demonstrate that efficient optical pumping of nuclear spins in semiconductor quantum dots (QDs) can be achieved by resonant pumping of optically "forbidden" transitions. This process corresponds to one-to-one conversion of a photon absorbed by the dot into a polarized nuclear spin, which also has potential for initialization of hole spin in QDs. Pumping via the "forbidden" transition is a manifestation of the "optical solid effect", an optical analogue of the effect previously observed in electron spin resonance experiments in the solid state. We find that by employing this effect, nuclear polarization of 65% can be achieved, the highest reported so far in optical orientation studies in QDs. The efficiency of the spin pumping exceeds that employing the allowed transition, which saturates due to the low probability of electron-nuclear spin flip-flop.Comment: 5 pages, 3 figures, submitted to Phys. Rev. Let
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